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| FLK017XP GaAs FET & HEMT Chips FEATURES * * * * High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: add = 26%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Source Rating 15 -5 Unit V V W C C Tc = 25C 1.15 -65 to +175 175 Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with gate resistance of 3000. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Noise Figure Associated Gain Maximum Availble Gain Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB add NF Gas Ga(max) Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 40mA VDS = 5V, IDS = 3mA IGS = -3A VDS = 10V IDS 0.6 IDSS f = 14.5GHz VDS = 3V IDS = 20mA f = 12GHz VDS = 10V IDS = 36mA f = 12GHz Channel to Case Min. -1.0 -5 19.5 7.0 Limit Typ. Max. 60 90 30 -2.0 20.5 8.0 26 2.5 7 11 65 -3.5 130 Unit mA mS V V dBm dB % dB dB dB C/W Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. G.C.P.: Gain Compression Point Edition 1.3 July 1999 1 FLK017XP GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Total Power Dissipation (W) Drain Current (mA) 2 60 VGS =0V -0.5V 40 -1.0V 20 -1.5V -2.0V 1 0 50 100 150 200 2 4 6 8 10 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER VDS=10V 20 IDS0.6IDSS f = 14.5GHz 18 P1dB & add vs. VDS f = 14.5GHz IDS0.6IDSS Output Power (dBm) 22 P1dB (dBm) Pout 21 add (%) 20 19 add P1dB 16 add (%) 14 12 add 40 30 20 40 20 18 2 4 6 8 10 12 14 8 9 10 Input Power (dBm) Drain-Source Voltage (V) 2 FLK017XP GaAs FET & HEMT Chips S-PARAMETERS VDS = 10V, IDS = 40mA S21 S12 MAG ANG MAG ANG 2.832 2.824 2.799 2.758 2.703 2.638 2.564 2.485 2.401 2.316 2.231 2.147 2.064 1.985 1.908 1.834 1.764 1.697 1.634 1.574 1.516 1.462 1.410 1.361 1.314 1.269 1.227 1.186 1.147 1.110 1.074 1.039 1.006 .974 .943 .913 .885 .856 .829 .803 .777 178.4 171.9 163.9 156.0 148.3 140.7 133.4 126.2 119.4 112.7 106.3 100.1 94.1 88.3 82.7 77.2 72.0 66.8 61.8 57.0 52.2 47.6 43.0 38.6 34.2 29.9 25.7 21.6 17.5 13.5 9.5 5.6 1.7 -2.1 -5.9 -9.6 -13.3 -16.9 -20.5 -24.1 -27.7 .001 .007 .014 .021 .028 .034 .039 .044 .049 .053 .056 .059 .062 .064 .066 .067 .069 .070 .071 .072 .072 .073 .073 .073 .073 .073 .073 .073 .073 .073 .072 .072 .072 .071 .071 .071 .070 .070 .070 .070 .069 88.9 84.7 79.5 74.3 69.4 64.6 60.0 55.6 51.5 47.6 44.0 40.6 37.3 34.3 31.5 28.9 26.4 24.1 21.9 19.8 17.9 16.1 14.4 12.8 11.3 9.9 8.6 7.3 6.2 5.1 4.1 3.1 2.3 1.5 0.7 0.0 -0.6 -1.2 -1.7 -2.2 -2.7 FREQUENCY (MHZ) 100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 18500 19000 19500 20000 S11 MAG 1.000 .998 .992 .982 .969 .953 .936 .918 .899 .881 .863 .846 .830 .816 .802 .791 .780 .771 .764 .757 .752 .747 .744 .741 .739 .738 .738 .738 .739 .740 .742 .744 .746 .749 .752 .755 .758 .761 .765 .768 .772 S22 MAG .846 .845 .842 .838 .832 .825 .817 .809 .800 .792 .784 .776 .769 .762 .755 .749 .744 .739 .735 .731 .727 .724 .721 .718 .716 .713 .711 .710 .708 .707 .706 .705 .704 .704 .703 .703 .703 .703 .703 .704 .704 ANG -1.9 -9.5 -18.9 -28.2 -37.4 -46.3 -55.0 -63.5 -71.6 -79.5 -87.1 -94.4 -101.5 -108.3 -114.8 -121.1 -127.1 -133.0 -138.6 -143.9 -149.1 -154.1 -158.9 -163.5 -168.0 -172.3 -176.4 179.6 175.8 172.1 168.5 165.1 161.8 158.5 155.5 152.5 149.6 146.8 144.1 141.4 138.9 ANG -0.6 -2.9 -5.7 -8.5 -11.2 -13.8 -16.4 -18.8 -21.2 -23.5 -25.8 -28.0 -30.1 -32.2 -34.3 -36.4 -38.4 -40.5 -42.5 -44.6 -46.7 -48.8 -51.0 -53.2 -55.4 -57.6 -59.8 -62.1 -64.5 -66.8 -69.2 -71.7 -74.2 -76.7 -79.2 -81.8 -84.5 -87.1 -89.8 -92.6 -95.3 NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (0.2mm length, 25m Dia Au wire) Drain n=1 (0.2mm length, 25m Dia Au wire) Source n=4 (0.3mm length, 25m Dia Au wire) Download S-Parameters, click here 3 FLK017XP GaAs FET & HEMT Chips CHIP OUTLINE 40 (Unit: m) Drain 41030 Source electrodes are electrically insulated from the bottom of the chip (PHS) Die Thickness: 6020m 60 70 33030 Source 110 Gate Source 40 70 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 50 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 |
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